NSN: 5962-01-293-0135

Technical Characteristics

• Memory Device Type

  pal

• Time Rating Per Chacteristic

  45.00 nanoseconds maximum propagation delay time, low to high level output and 45.00 nanoseconds maximum propagation delay time, high to low level output

• Test Data Document

  96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).

• Maximum Power Dissipation Rating

  2.0 watts

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Case Outline Source And Designator

  d-8 mil-m-38510

• Body Width

  0.220 inches minimum and 0.310 inches maximum

• Inclosure Material

  ceramic

• Body Height

  0.185 inches nominal

• Terminal Surface Treatment

  solder

• Features Provided

  monolithic and programmable and bipolar

• Body Length

  1.060 inches maximum

• Terminal Type And Quantity

  20 printed circuit

• Inclosure Configuration

  dual-in-line

• Output Logic Form

  transistor-transistor logic

• Voltage Rating And Type Per Characteristic

  12.0 volts maximum power source

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Input Circuit Pattern

  16 input