NSN: 5962-01-358-0909

Technical Characteristics

• Word Quantity (Non-Core)

  256

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Memory Device Type

  prom

• Bit Quantity (Non-Core)

  2048

• Input Circuit Pattern

  10 input

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Inclosure Material

  ceramic

• Terminal Surface Treatment

  solder

• Voltage Rating And Type Per Characteristic

  7.0 volts maximum power source

• Features Provided

  monolithic and hermetically sealed and positive outputs

• Time Rating Per Chacteristic

  45.00 nanoseconds nominal delay

• Inclosure Configuration

  dual-in-line

• Current Rating Per Characteristic

  85.00 milliamperes reverse current, dc absolute

• Maximum Power Dissipation Rating

  300.0 milliwatts

• Output Logic Form

  transistor-transistor logic