NSN: 5962-01-363-6390

Technical Characteristics

• Memory Device Type

  prom

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Inclosure Material

  ceramic

• Terminal Surface Treatment

  solder

• Voltage Rating And Type Per Characteristic

  7.0 volts maximum power source

• Input Circuit Pattern

  12 input

• Terminal Type And Quantity

  18 printed circuit

• Inclosure Configuration

  dual-in-line

• Output Logic Form

  transistor-transistor logic

• Features Provided

  burn in and hermetically sealed and bipolar and programmed

• Bit Quantity (Non-Core)

  4096

• Word Quantity (Non-Core)

  1024

• Operating Temp Range

  -55.0/+125.0 deg celsius