NSN: 5962-01-366-3039

Technical Characteristics

• Output Logic Form

  complementary-metal oxide-semiconductor logic

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Inclosure Material

  ceramic

• Maximum Power Dissipation Rating

  1.0 watts

• Terminal Surface Treatment

  solder

• Capitance Rating Per Characteristic

  8.00 input picofarads maximum and 8.00 output picofarads maximum

• Current Rating Per Characteristic

  50.00 milliamperes average forward current averaged over a full 60-hz cycle not applicable

• Input Circuit Pattern

  12 input

• Terminal Type And Quantity

  28 printed circuit

• Case Outline Source And Designator

  d-10 mil-m-38510

• Bit Quantity (Non-Core)

  9216

• Inclosure Configuration

  dual-in-line

• Time Rating Per Chacteristic

  30.00 nanoseconds af output megawatts

• Memory Device Type

  first-in first-out

• Body Width

  0.500 inches minimum and 0.610 inches maximum

• Word Quantity (Non-Core)

  1024

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Features Provided

  monolithic and parallel operation

• Voltage Rating And Type Per Characteristic

  -0.5 volts minimum power source and 7.0 volts maximum power source

• Body Length

  1.490 inches maximum

• Body Height

  0.217 inches maximum

• Part Name Assigned By Controlling Agency

  parallel fifo

• Test Data Document

  96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).