NSN: 5962-01-369-6838

Technical Characteristics

• ~1

  data on certain environmental and performanc

• Test Data Document

  81349-mil-m-38510 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type

• Time Rating Per Chacteristic

  55.00 nanoseconds af output megawatts

• Current Rating Per Characteristic

  100.00 milliamperes reverse current, dc nominal

• Departure From Cited Designator

  altered by programming,marking & testing

• Nondefinitive Spec/std Data

  j case and 02 type and a finish and 214 number

• Terminal Type And Quantity

  24 printed circuit

• Inclosure Configuration

  dual-in-line

• Voltage Rating And Type Per Characteristic

  7.0 volts maximum total supply and 4.5 volts minimum positive power supply span and 5.5 volts nominal absolute input and -0.3 volts minimum total supply and 5.5 volts maximum positive power supply span

• Specification/standard Data

  67268-82009 government standard and 56232-1219253 manufacturers specification control

• Features Provided

  programmed and schottky

• Part Name Assigned By Controlling Agency

  microcircuit,digital,schottky,bipolar 65,536 bit (8k x 8) programmable read-only memory (prom),monolithic silicon

• Terminal Surface Treatment

  solder

• Inclosure Material

  ceramic

• Case Outline Source And Designator

  d-3 mil-m-38510

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Memory Device Type

  prom

• End Item Identification

  an/fps-124

• Hybrid Technology Type

  monolithic

• Bit Quantity (Non-Core)

  65536

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Output Logic Form

  bipolar metal-oxide semiconductor

• Maximum Power Dissipation Rating

  1.04 watts