NSN: 5962-01-369-8531

Technical Characteristics

• Test Data Document

  81349-mil-m-38510 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type

• ~1

  data on certain environmental and performanc

• Part Name Assigned By Controlling Agency

  microcircuit,digital,schottky,bipolar 16,384 bit(2kx8) programmable read-only memory//9prom/0,monolithic silicon

• Output Logic Form

  bipolar metal-oxide semiconductor

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Features Provided

  programmed

• Hybrid Technology Type

  monolithic

• Nondefinitive Spec/Std Data

  204 number

• End Item Identification

  an/fps-124

• Memory Device Type

  prom

• Time Rating Per Chacteristic

  65.00 nanoseconds af output megawatts

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Departure From Cited Document

  altered by programming,marking & testing

• Inclosure Material

  ceramic

• Terminal Surface Treatment

  solder

• Current Rating Per Characteristic

  30.00 milliamperes collector cutoff current, dc, emitter open horsepower metric and 5.00 milliamperes peak forward surge current horsepower metric

• Voltage Rating And Type Per Characteristic

  -0.5 volts minimum total supply and 4.5 volts minimum positive power supply span and 7.0 volts maximum total supply and 5.5 volts maximum positive power supply span

• Case Outline Source And Designator

  d-9 mil-m-38510

• Inclosure Configuration

  dual-in-line

• Specification/Standard Data

  56232-1212248 manufacturers specification control

• Terminal Type And Quantity

  24 printed circuit

• Input Circuit Pattern

  14 input

• Bit Quantity (Non-Core)

  16384

• Maximum Power Dissipation Rating

  1.02 watts