NSN: 5962-01-369-9729

Technical Characteristics

• ~1

  data on certain environmental and performanc

• Time Rating Per Chacteristic

  250.00 nanoseconds af output megawatts

• Test Data Document

  81349-mil-m-38510 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Part Name Assigned By Controlling Agency

  microcircuit,digital,262,144 bit mos,ultraviolet erasable programmable read-only memory (eprom),monolithic silicon

• Bit Quantity (Non-Core)

  262144

• Hybrid Technology Type

  monolithic

• Features Provided

  programmed and ultraviolet erasable

• End Item Identification

  an/fps-124

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Inclosure Material

  ceramic

• Maximum Power Dissipation Rating

  1.0 watts

• Terminal Surface Treatment

  solder

• Specification/standard Data

  81349--38510/224 government specification and 56232-1219254 manufacturers source control

• Terminal Type And Quantity

  28 printed circuit

• Case Outline Source And Designator

  d-10 mil-m-38510

• Memory Device Type

  eprom

• Inclosure Configuration

  dual-in-line

• Current Rating Per Characteristic

  50.00 milliamperes reverse current, dc blank

• Voltage Rating And Type Per Characteristic

  -0.6 volts minimum total supply and 6.25 volts maximum total supply

• Capitance Rating Per Characteristic

  6.00 input picofarads maximum and 12.00 output picofarads maximum

• Departure From Cited Designator

  altered by programming,marking & testing

• Nondefinitive Spec/std Data

  y case and a finish and 01 type and b class and 204 number

• Output Logic Form

  metal-nitride-oxide semiconductor