NSN: 5962-01-373-6589

Technical Characteristics

• Time Rating Per Chacteristic

  25.00 nanoseconds af output megawatts

• Operating Temp Range

  -65.0/+150.0 deg celsius

• Inclosure Configuration

  flat pack

• Memory Device Type

  pal

• Hybrid Technology Type

  monolithic

• Case Outline Source And Designator

  f-16 mil-m-38510

• Input Circuit Pattern

  22 input

• Output Logic Form

  complementary-metal oxide-semiconductor logic

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Inclosure Material

  ceramic

• Current Rating Per Characteristic

  16.00 milliamperes reverse current, dc nominal

• Terminal Surface Treatment

  solder

• Part Name Assigned By Controlling Agency

  microcircuit,memory,digital,cmos uv erasable pal

• Departure From Cited Designator

  altered by programming & marking

• Voltage Rating And Type Per Characteristic

  -0.5 volts minimum applied and 7.0 volts maximum applied

• Terminal Type And Quantity

  24 printed circuit

• Maximum Power Dissipation Rating

  1.2 watts

• Specification/standard Data

  67268-5962-8753901ka government standard and 94987-258480-6 manufacturers source control

• Features Provided

  programmed and ultraviolet erasable and monolithic

• Test Data Document

  96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.). and 81349-mil-m-38510 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in

• ~1

  specification format; excludes commercial catalogs, ind