NSN: 5962-01-464-3420

Technical Characteristics

• End Item Identification

  f-15e acft; f-18 acft

• Supplementary Features

  22-input, 10-output, ee cmos, architecturally generic, programmable and-or array

• Terminal Type And Quantity

  24 printed circuit

• Inclosure Configuration

  dual-in-line

• Voltage Rating And Type Per Characteristic

  -0.5 volts minimum input and 7.0 volts maximum input

• Features Provided

  monolithic and electrostatic sensitive

• Time Rating Per Chacteristic

  25.00 nanoseconds nominal access

• Terminal Surface Treatment

  solder

• Inclosure Material

  ceramic

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Output Logic Form

  complementary-metal oxide-semiconductor logic

• Test Data Document

  96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).

• Part Name Assigned By Controlling Agency

  microcircuit, memory, digital, cmos ee programmable array logic, monolithic silicon

• Special Features

  recommended operating supply voltage (vcc) 4.5 to 5.5 vdc; case outline descriptive designator mil-std-1835, gdip3-t24 or cdip4-t24

• Memory Device Type

  pal

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Maximum Power Dissipation Rating

  1.5 watts