NSN: 5980-00-390-9861

Technical Characteristics

• General Characteristics Item Description

  gallium arsenide diode light source optically coupled to a silicon npn phototransistor; infrared-emitting diode maximum ratings are reverse voltage 2v; forward current 40ma; phototransistor maxium ratings are; collector emitter voltage 35vdc; collector

• Test Data Document

  81349-mil-prf-19500 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general

• Specification/standard Data

  81349-mil-prf-19500/486 government specification

• ~1

  type data on certain environmental and performa

• ~1

  base voltage 35vdc; emitter base voltage 4vdc;