121G3362-1-1

Semiconductor Devices and Associated Hardware

TRANSISTOR

121G3362-1-1

5961-00-163-3512

5961 - Semiconductor Devices and Associated Hardware

Zenith Electronics Corporation

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Technical Characteristics

  • Mounting Facility Quantity

    2

  • Internal Configuration

    junction contact

  • Internal Junction Configuration

    npn

  • Voltage Rating In Volts Per Characteristic

    50.0 maximum breakdown voltage, collector-to-base, emitter open and 50.0 maximum breakdown voltage, collector-to-emitter, base open and 3.5 maximum breakdown voltage, emitter-to-base, collector open

  • Inclosure Material

    metal

  • Overall Length

    0.065 inches maximum

  • Overall Diameter

    0.240 inches maximum

  • Mounting Method

    unthreaded hole

  • Features Provided

    hermetically sealed case

  • Semiconductor Material

    silicon

  • Current Rating Per Characteristic

    250.00 milliamperes maximum collector current, dc

  • Power Rating Per Characteristic

    1.0 watts maximum collector power dissipation

  • Terminal Type And Quantity

    3 ribbon

Certified to
AS6081 Methods

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