MSC82010

Semiconductor Devices and Associated Hardware

TRANSISTOR

MSC82010

5961-00-163-3513

5961 - Semiconductor Devices and Associated Hardware

National Electronics

TRANSISTOR

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Technical Characteristics

  • Voltage Rating In Volts Per Characteristic

    50.0 minimum breakdown voltage, collector-to-base, emitter open and 50.0 minimum breakdown voltage, collector-to-emitter, with specified resistance between base and emitter and 3.5 minimum breakdown voltage, emitter-to-base, collector open

  • Test Data Document

    67177-47g3220 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)

  • Overall Width

    0.740 inches minimum and 0.760 inches maximum

  • Mounting Method

    unthreaded hole

  • Power Rating Per Characteristic

    20.0 watts forward power dissipation, dc universal and 50.0 watts forward power dissipation, dc pascal

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

  • Mounting Facility Quantity

    2

  • Overall Length

    0.790 inches minimum and 0.810 inches maximum

  • Overall Height

    0.145 inches minimum and 0.185 inches maximum

  • Inclosure Material

    ceramic and metal

  • Semiconductor Material

    silicon

  • Transfer Ratio

    20.0 minimum static forward current transfer ratio, common-emitter and 120.0 maximum static forward current transfer ratio, common-emitter

  • Terminal Type And Quantity

    2 ribbon and 1 case

  • Special Features

    junction pattern arrangement: npn

  • Internal Configuration

    junction contact

  • Current Rating Per Characteristic

    4.00 amperes source cutoff current maximum and 500.00 microamperes zero-gate-voltage source current preset

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