2N2322A

Semiconductor Devices and Associated Hardware

SEMICONDUCTOR DEVICE,THYRISTOR

2N2322A

5961-00-193-9921

5961 - Semiconductor Devices and Associated Hardware

Bae Systems Information And

SEMICONDUCTOR DEVICE,THYRISTOR

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Technical Characteristics

  • Terminal Type And Quantity

    3 uninsulated wire lead

  • Mounting Method

    terminal

  • Current Rating Per Characteristic

    125.00 amperes forward current, average absolute

  • Terminal Circle Diameter

    0.200 inches nominal

  • Overall Length

    0.260 inches maximum

  • Overall Diameter

    0.370 inches maximum

  • Electrode Internally-Electrically Connected To Case

    anode

  • Internal Configuration

    junction contact

  • Features Provided

    hermetically sealed case

  • Semiconductor Material

    silicon

  • Terminal Length

    1.500 inches minimum

  • Voltage Rating In Volts Per Characteristic

    25.0 maximum breakover voltage, dc

  • Special Features

    junction pattern arrangement: pnpn

  • Inclosure Material

    glass and metal

  • Power Rating Per Characteristic

    10.0 milliwatts small-signal input power, common-collector blank

  • Maximum Operating Temp Per Measurement Point

    125.0 deg celsius case

Certified to
AS6081 Methods

Implementing Quality Procurement

A rigorous vendor selection process and vendor management system are essential to ensuring quality.
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Supplying Quality Products

We take every measure to ensure that we supply quality, authentic parts including a strict vendor selection process and rigorous product inspections..
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Providing Quality People

Our team of dedicated account managers, procurement professionals and specialized inspectors is the most valuable resource we have.
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