2N3112

Semiconductor Devices and Associated Hardware

TRANSISTOR

2N3112

5961-00-711-0771

5961 - Semiconductor Devices and Associated Hardware

Electronic Industries Association

TRANSISTOR

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Technical Characteristics

  • Terminal Type And Quantity

    1 case and 3 uninsulated wire lead

  • Semiconductor Material

    silicon

  • Power Rating Per Characteristic

    300.0 milliwatts maximum total device dissipation

  • Current Rating Per Characteristic

    10.00 milliamperes maximum off-state current, dc and 10.00 milliamperes maximum gate current

  • Voltage Rating In Volts Per Characteristic

    5.0 maximum drain to source voltage and 20.0 maximum breakdown voltage, gate-to-source, with all other terminals short-circuited to source

  • Mounting Method

    terminal

  • Channel Polarity And Control Type

    p-channel junction type

  • Internal Configuration

    field effect

  • Overall Diameter

    0.230 inches maximum

  • Overall Length

    0.210 inches maximum

  • Features Provided

    hermetically sealed case

  • Terminal Circle Diameter

    0.100 inches nominal

  • Electrode Internally-Electrically Connected To Case

    drain

  • Terminal Length

    0.500 inches minimum

  • Inclosure Material

    metal

Certified to
AS6081 Methods

Implementing Quality Procurement

A rigorous vendor selection process and vendor management system are essential to ensuring quality.
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Supplying Quality Products

We take every measure to ensure that we supply quality, authentic parts including a strict vendor selection process and rigorous product inspections..
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Providing Quality People

Our team of dedicated account managers, procurement professionals and specialized inspectors is the most valuable resource we have.
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