2N2102A

Semiconductor Devices and Associated Hardware

TRANSISTOR

2N2102A

5961-00-768-2049

5961 - Semiconductor Devices and Associated Hardware

Bae Systems Information And

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Technical Characteristics

  • Voltage Rating In Volts Per Characteristic

    120.0 maximum collector to base voltage/static/emitter open and 80.0 maximum collector-to-emitter, resistance between base and emitter and 65.0 maximum collector to emitter voltage/static/base open and 7.0 maximum emitter to base voltage, static,

  • Special Features

    junction pattern arrangement: npn

  • Power Rating Per Characteristic

    1.0 watts small-signal input power, common-collector absolute

  • ~1

    collector open

  • Electrode Internally-Electrically Connected To Case

    collector

  • Terminal Type And Quantity

    3 uninsulated wire lead

  • Mounting Method

    terminal

  • Terminal Circle Diameter

    0.200 inches nominal

  • Overall Length

    0.260 inches maximum

  • Overall Diameter

    0.370 inches maximum

  • Internal Configuration

    junction contact

  • Features Provided

    hermetically sealed case

  • Semiconductor Material

    silicon

  • Terminal Length

    1.500 inches minimum

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

  • Current Rating Per Characteristic

    1.00 amperes source cutoff current maximum

  • Specification/standard Data

    80131-release3961 professional/industrial association specification

  • Inclosure Material

    metal

Certified to
AS6081 Methods

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