MIS-31485
Semiconductor Devices and Associated Hardware
TRANSISTOR
MIS-31485
5961 - Semiconductor Devices and Associated Hardware
M/a-Com Technology Solutions Inc.
TRANSISTOR
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Technical Characteristics
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Special Features
contains beryllium oxide; junction pattern arrangement: npn
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Internal Configuration
junction contact
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
56.0 minimum breakdown voltage, collector-to-base, emitter open and 18.0 minimum breakdown voltage, collector-to-emitter, base open and 4.0 minimum breakdown voltage, emitter-to-base, collector open
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Current Rating Per Characteristic
8.00 amperes source cutoff current maximum
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