BD232

Semiconductor Devices and Associated Hardware

TRANSISTOR

BD232

5961-00-828-0719

5961 - Semiconductor Devices and Associated Hardware

Genter Succ Anciens Ets E. Debette

TRANSISTOR

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Technical Characteristics

  • Power Rating Per Characteristic

    20.8 watts small-signal input power, common-collector absolute

  • Overall Length

    0.635 inches minimum and 0.645 inches maximum

  • Overall Diameter

    0.495 inches minimum and 0.505 inches maximum

  • Mounting Method

    unthreaded hole

  • Maximum Operating Temp Per Measurement Point

    150.0 deg celsius junction

  • Current Rating Per Characteristic

    500.00 milliamperes source cutoff current maximum

  • Inclosure Material

    plastic

  • Semiconductor Material

    silicon

  • Features Provided

    hermetically sealed case

  • Voltage Rating In Volts Per Characteristic

    300.0 maximum breakdown voltage, collector-to-base, emitter open and 3.0 maximum breakdown voltage, emitter-to-base, collector open

  • Special Features

    junction pattern arrangement: npn

  • Internal Configuration

    junction contact

  • Terminal Type And Quantity

    3 uninsulated wire lead

  • Mounting Facility Quantity

    1

Certified to
AS6081 Methods

Implementing Quality Procurement

A rigorous vendor selection process and vendor management system are essential to ensuring quality.
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Supplying Quality Products

We take every measure to ensure that we supply quality, authentic parts including a strict vendor selection process and rigorous product inspections..
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Providing Quality People

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