2N2326AS
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
2N2326AS
5961 - Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
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Technical Characteristics
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Test Data Document
81349-mil-s-19500 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type
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Terminal Type And Quantity
3 uninsulated wire lead
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Mounting Method
terminal
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Terminal Circle Diameter
0.200 inches nominal
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Overall Diameter
0.335 inches minimum and 0.370 inches maximum
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Precious Material
gold
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Electrode Internally-Electrically Connected To Case
anode
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Internal Configuration
junction contact
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Specification/Standard Data
81349-mil-s-19500/276 government specification
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~1
data on certain environmental and performanc
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Current Rating Per Characteristic
0.22 amperes forward current, average absolute and 15.00 amperes forward current, average preset
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Terminal Length
0.500 inches minimum and 0.750 inches maximum
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Maximum Operating Temp Per Measurement Point
125.0 deg celsius ambient air
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-5
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Semiconductor Material
silicon
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Overall Length
0.240 inches minimum and 0.260 inches maximum
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Voltage Rating In Volts Per Characteristic
200.0 maximum reverse voltage, peak and 2.2 nominal forward voltage, peak and 300.0 maximum nonrepetitive peak reverse voltage, maximum peak total value
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Special Features
junction pattern arrangement: pnpn
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Precious Material And Location
terminal surface option gold
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Inclosure Material
metal