845576-1
Semiconductor Devices and Associated Hardware
TRANSISTOR
845576-1
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Overall Length
0.170 inches minimum and 0.210 inches maximum
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Overall Diameter
0.209 inches minimum and 0.230 inches maximum
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Internal Configuration
field effect
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Channel Polarity And Control Type
n-channel insulated gate type
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
t0-72
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Mounting Method
terminal
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Voltage Rating In Volts Per Characteristic
20.0 maximum drain to source voltage and 20.0 maximum drain to substrate voltage and 20.0 maximum source to substrate voltage and m8.0 minimum gate to substrate voltage and 6.0 maximum gate to substrate voltage
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Power Rating Per Characteristic
400.0 milliwatts maximum total power dissipation
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Maximum Operating Temp Per Measurement Point
175.0 deg celsius ambient air
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Terminal Type And Quantity
4 uninsulated wire lead
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Inclosure Material
metal
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Semiconductor Material
silicon
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Current Rating Per Characteristic
50.00 milliamperes maximum drain current