NSN: 5961-01-366-4620

Semiconductor Devices and Associated Hardware

TRANSISTOR

5961 - Semiconductor Devices and Associated Hardware

TRANSISTOR

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Technical Characteristics

  • Overall Length

    0.170 inches minimum and 0.210 inches maximum

  • Overall Diameter

    0.209 inches minimum and 0.230 inches maximum

  • Internal Configuration

    field effect

  • Channel Polarity And Control Type

    n-channel insulated gate type

  • Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

    t0-72

  • Mounting Method

    terminal

  • Voltage Rating In Volts Per Characteristic

    20.0 maximum drain to source voltage and 20.0 maximum drain to substrate voltage and 20.0 maximum source to substrate voltage and m8.0 minimum gate to substrate voltage and 6.0 maximum gate to substrate voltage

  • Power Rating Per Characteristic

    400.0 milliwatts maximum total power dissipation

  • Maximum Operating Temp Per Measurement Point

    175.0 deg celsius ambient air

  • Terminal Type And Quantity

    4 uninsulated wire lead

  • Inclosure Material

    metal

  • Semiconductor Material

    silicon

  • Current Rating Per Characteristic

    50.00 milliamperes maximum drain current

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